| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Characteristics of Sputtered AlN Buffer Layer as Function of N2 Partial Pressure on Patterned Sapphire Substrate |
| 초록 | Gallium nitride (GaN)-based light emitting diodes (LEDs) have attracted much attention in the solid-state lighting fields such as full color or white LED displays, backlights for liquid crystal display. There is an increasing interest in developing light extraction efficiency for the next generation of high performance LEDs. In general, GaN layers are synthesized on a single crystal sapphire substrate which has many advantages of hexagonal crystal structure preservation. However, the practical use of GaN-based materials is greatly hindered by generating high density of threading dislocation in the GaN epitaxial layer due to the large lattice mismatch of lattice constant and thermal expansion coefficient between the GaN epitaxial layer and sapphire substrate. To resolve this problems, epitaxial lateral overgrowth and patterned sapphire substrate (PSS) seem to be the most applicable strategy. Another strategy is use of buffer layer that can improve the quality of GaN layer. Many researcher have deposited the AlN buffer layer using various method such as metal-organic chemical vapor deposition (MOCVD) and reactive sputtering system. In this study, AlN buffer layers were grown on the PSS substrate by radio- frequency reactive magnetron sputtering system using Al target(99.999% purity) at different nitrogen/argon flow ratio. GaN layer was deposited on the pre-grown AlN/PSS substrate using MOCVD process. To investigate the characterization of the epitaxial layers, field-emission scanning electron microscope (SEM) and X-ray diffraction (XRD) were measured. |
| 저자 | 박준성, 김대식, 정우섭, 조승희, 김철, 변동진 |
| 소속 | 고려대 |
| 키워드 | AlN; GaN; patterned sapphire substrate; RF reactive sputtering |
