| 초록 |
Recently, a rapidly expanding interest has been given to transition metal dichalcogenides such as MoS2, which have layered crystal structures with a bandgap. While the intriguing electrical and optoelectronic properties of transition metal dichalcogenides offer attractive possibilities for many potential applications, large-scale growth of monolayer MoS2 is yet to be achieved. In this presentation, we report the large-size thin films of uniform single-layer MoS2 on sapphire substrates grown by chemical vapor deposition based on the reaction of gaseous MoO3 and S evaporated from solid sources. The as-grown thin films of single-layer MoS2 were continuous and uniform in thickness for more than 4 cm without the existence of triangular-shaped MoS2 clusters. Compared to mechanically-exfoliated crystals, the as-grown single-layer MoS2 thin films possessed consistent chemical valence states and crystal structure along with strong photoluminescence emission and optical absorbance at high energy. |
