| 초록 |
We present a simple, scalable and clean method for transferring graphene grown by chemical vapor deposition on Cu onto SiO2/Si substrate. Because PMMA, which is generally used as graphene supporting layer, leaves residues on graphene surface after transfer, it was replaced by PET/silicone film that gives clean surface through dispersive adhesion not viscosity of PMMA. Etchants such as FeCl3, Ammonium Persulfate(APS), which are typically used as Cu remover, are also replaced with H2 bubbling separation to enhance cleanliness with prevention graphene from ion doping by etchant. It only takes within an hour to trail whole process of graphene transfer, which means convenient and economically efficient. It was proven in this paper that graphene transferred by new method is superior than PMMA-mediated transfer in point of cleanliness by analyzing optical, atomic microscopy, Raman spectroscopy and electrical transport measurement. |
