| 학회 | 한국고분자학회 |
| 학술대회 | 2002년 가을 (10/11 ~ 10/12, 군산대학교) |
| 권호 | 27권 2호, p.214 |
| 발표분야 | 분자전자 부문위원회 |
| 제목 | Effects of Fluorine for Photoresist Properties |
| 초록 | Photoresist is one of the most important part in semiconductor industries. It has several requirements like etching resistance, photosensitivity, transparency at exposure wavelength and so on. For the past few years, huge efforts have been made to improve transparency at 157 nm exposure, and now it is known that fluorine enhances transparency to a great extent. But, there are some disadvantages originated from using fluorocompounds. In this paper, monomers were synthesized via Grignard reaction with chloromethyltrimethylsilane and acetone with or without fluorine, and reaction with methacryloyl chloride was followed. Then they were copolymerized with tetrahydropyranyl methacrylate and ethylene glycol methyl ether methacrylate. Properties and lithographic qualities of the polymer are also investigated. |
| 저자 | 김진백1, 김영우2, 권영길3, 이재준* |
| 소속 | 1한국과학기술원 화학과, 2분자과학사업단(BK21) & 기능성고분자연구센터, 3*삼성종합기술원 |
| 키워드 | fluorine; polymer property; Grignard; photoresist |
