| 초록 |
Nanohybrid process has entered the spotlight as novel process for fabricating highly dense nanoscale alloy films. OTFT commercialization requires excellent dielectric properties of gate dielectric layer. Here, we describe the fabrication and characterization of TiO2 nanohybrid gate dielectric films using a PEALD process, and their OTFT applications. This films exhibited a veery smooth surface, a high dielectric constant, and a low leakage current densities to single TiO2 films. Importantly, a 50 nm thick film dramatically enhanced the value of OTFT on a pentacene and polymer semiconductor device, and the high-off current level in a single TiO2 film was effectively reduced. The nanohybrid process removes the drawbacks inherent in each single layer so that this new nanohybrid film provides excellent dielectric properties suitable for fabricating high performance OTFTs. |
