| 초록 |
In this study, we investigated the effects of processing solvent and post-treatment on the surface properties and structural development of Silk fibroin (SF) films, which were used in gate-dielectric of organic thin-film transistors (OTFTs). The SF films cast from aqueous solution exhibited an amorphous structure with random coil conformations, leading to poor dielectric properties. In contrast, the use of formic acid solution and sequential methanol vapor treatment after film casting induced smoother SF surface. Moreover, its crystallinity also improved dramatically. Furthermore, the SF films cast from formic acid solution and treated with methanol vapor were capable of growth of highly ordered organic semiconductor thin films deposited on these films. As a result, pentacene TFTs fabricated with the SF films showed high performance and stable operation. This indicates a strong correlation between the structure of SF film and dielectric performances of OTFTs. |
