| 학회 |
한국재료학회 |
| 학술대회 |
2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 |
17권 1호 |
| 발표분야 |
C. Energy and the Environment Technology(에너지 및 환경재료) |
| 제목 |
ALD Al2O3 for Si solar cell application |
| 초록 |
We have investigated the effect of surface passivation for crystalline silicon using mass production atomic layer deposition (ALD) in order to solve bottlenecks for high-throughput production of atomic layer deposited Al2O3. We examined mass production suitability such as uniformity, carrier lifetime, thickness, and reflectance. The film properties of Al2O3 deposited by high-throughput ALD are equivalent to that by single type ALD. The influences of a various solar grade wafers and SiNx deposition methods were investigated using microwave photoconductance decay (PCD). A great increase in the surface passivation is observed after optimum post annealing. |
| 저자 |
장효식1, 신웅철2
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| 소속 |
1한국세라믹기술원 이천분원 태양전지&그린반도체실, 2(주)엔씨디 |
| 키워드 |
mass-production ALD; Al2O3; Si; crystalline; solar cell
|
| E-Mail |
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