| 초록 |
Titanium dioxide thin films were grown by atomic layer deposition (ALD) using tetrakis-dimethylamido titanium (TDMAT) and H2O2 as precursor and reactant, respectively. The films were grown at deposition temperature 100-250℃. Firstly, the characteristics of the ALD preparation of TiO2 films, as a function of the growth temperature, precursor, reactant and purge time, were studied. Secondly, the photo catalytic activity of thin films was studied by the decomposition of methylene blue. Various analysis methods were used to investigate the film properties, ellipsometer, X-ray diffractometer and Auger electron spectometer. |
