| 학회 |
한국재료학회 |
| 학술대회 |
2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 |
23권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Comparison of back-gate and top-gate SnS2 field-effect transistor with hBN substrate and graphene electrodes |
| 초록 |
Transition metal dichalcogenides have emerged as a promising candidate for nanoelectronic devices to overcome limitations of Si-based devices. However, most of the researches have been focusing on MoX2 and WX2 (X = S, Se, and Te), which are made using rare earth elements. On the other hand, field-effect transistors using SnS2 could be fabricated with a lower budget because of its lower synthesis temperature and abundance of the element Sn. Therefore, in this research, we use SnS2 as the channel material to demonstrate a high-performance field-effect transistor with graphene electrodes encapsulated between hBN. All 2D materials used in this research were mechanically exfoliated from as-received bulk materials and dry-transferred to reduce impurities as low as possible. Our result showed that a high on/off ratio of more than 5X108, a mobility of ~65 cm2/Vs and a subthreshold swing of ~100 mV/dec with the hBN gate dielectric and the graphene gate electrode. We also compared various contact structures using various combinations of metal (Ni/Au) and bottom/top graphene source/drain electrodes to analyze the difference of lateral/vertical charge conduction. |
| 저자 |
이정수, 이건우, 서호준, 김소희, 설원제, 이승백
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| 소속 |
한양대 |
| 키워드 |
<P>Thin-film transistor; graphene; SnS2; hBN</P>
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| E-Mail |
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