| 학회 | 한국재료학회 |
| 학술대회 | 2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 | 19권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Study of MnO resistive switching random access memory (ReRAM) using layer-by-layer (LbL) process |
| 초록 | Layer-by-layer (LbL) method was reported to be useful for preparing organic and/or inorganic process nanocomposite films with suitable electrical properties and layer thickness as well as various functional components on substrates with different size and shape. LbL method can be achieved by tuning the complementary interactions. And advantages of LbL method into nonvolatile memory devices, electrostatically charged organic materials possessing resistive switching properties that do not require high temperature treatments should be used, and amounts and thickness of the adsorbed material should be quantified at the nanoscale. We have synthesized MnO nanoparticles in using a nucleophilic substitution reaction for LbL method of organic/inorganic multilayers in nonpolar solvents. We have deposited MnO nanoparticles using LbL method on patterned Pt bottom electrode and top electrodes were deposited using metal transfer process. The fabricated ReRAM structure was successfully functions to ~ 102 on/off ratio at 0.1V. LbL method and selective deposition of metal and MnO facilitate the formation of the 3-D cross-pointed ReRAMs. |
| 저자 | 이치영1, 이재갑1, 민경식1, 조진한2 |
| 소속 | 1국민대, 2고려대 |
| 키워드 | MnO; ReRAM; LbL |
