| 초록 |
Resistive Switching Memory has attracted a great deal of attention in recent year due to the simple structure and excellent memory characteristics such as fast switching speed, high density integration. Herein, we introduce Catalase(CAT) as active material for resistive switching. Cationic poly-(allylamine hydrochloride) (PAH), anionic CAT were deposited onto Pt-coated silicon substrate using layer-by-layer (LbL) assembly method. These nonvolatile memory devices showed the reversible bipolar resistive switching bahavior. These reversible current changes was caused by the charge trap/release of heme groups in CAT. These devices displayed fast switching speed and highly stable retention test. Furthermore we can improve the memory performance by inserting insulating polyelectrolyte layers. We expected our results give a new direction for next-genteration nonvolatile memory devices. |
