| 학회 |
한국재료학회 |
| 학술대회 |
2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 |
18권 1호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Growth of indium selenide by metal organic chemical vapor deposition (MOCVD) |
| 초록 |
Metal organic chemical vapor deposition (MOCVD) method is one of the prominent candidate to fabricate low-cost and high-quality CIGS thin film solar cells. MOCVD offers some potential advantages as compared with co-evaporation and physical vapor deposition due to an accurate control of the film quality, thickness, and composition. It also realizes abrupt compositions and doping transitions with well controlled doping levels in the thin films, leading to the improvement on the efficiency of solar cells. In this work, indium selenide (InSe) thin film as a buffer layer in CIGS solar cells has been deposited by MOCVD. TEIn and DESe were used as the indium and selenium organometallic sources, respectively. Ar gas was used as carrier gas. The crystalline phase of CIGS films was analyzed by high resolution X-ray diffraction (XRD) using Ka radiation from Cu (λ = 0.15406 nm). Field emission scanning electron microscopy (FE-SEM) was used to investigate the surface of CIGS films. The composition of CIGS films was determined by energy-dispersive X-ray spectroscopy (EDX). UV-VIS spectroscopy was used to investigate the band gap energy of CIGS films. MOCVD is feasible growth technique for the growth of InSe buffer layer in CIGS solar cells. |
| 저자 |
Young-Jin Jeong1, Chang-Sik Son1, Chul-Min Kim2, Chang-Hyun Ko2, Jae-Ho Yun2, Kyung-Hoon Yoon2
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| 소속 |
1Silla Univ., 2Korea Institute Of Energy Research |
| 키워드 |
MOCVD; InSe; deposition; metal organic
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| E-Mail |
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