| 학회 |
한국재료학회 |
| 학술대회 |
2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 |
19권 1호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
(Inx-1Gax)2Se3 Thin Films Grown by Metal Organic Chemical Vapor Deposition |
| 초록 |
We developed a metal organic chemical vapor deposition (MOCVD) method to fabricate low-cost and high-quality CIGS thin film solar cells. MOCVD offers some potential advantages as compared with co-evaporation and physical vapor deposition due to an accurate control of the film quality, thickness, and composition. It also realizes abrupt compositions and doping transitions with well controlled doping levels in the thin films, leading to the improvement on the efficiency of solar cells. Indium gallium selenide (In1-xGa)2Se3 thin film as a buffer layer in CIGS solar cells has been grown by MOCVD. TEIn, TMGa, DESe were used as the indium, gallium, selenium organometallic sources, respectively. N2 gas was used as carrier gas. The surface of CIGS films was observed by field emission scanning electron microscopy. The crystalline phase of CIGS films was analyzed by high resolution X-ray diffraction using Ka radiation from Cu (λ = 0.15406 nm). The composition of CIGS films was determined by energy-dispersive X-ray spectroscopy. UV-VIS spectroscopy was used to investigate the band gap energy of CIGS films. MOCVD is a promising growth technique for the growth of (In1-xGa)2Se3 buffer layer in CIGS solar cells. |
| 저자 |
Young-Jin Jeong1, Chang-Sik Son*2, Cheol-Min Kim1, Jae-Ho Yun2, Kyung-Hoon Yoon3
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| 소속 |
1Department of Materials Science & Engineering, 2Silla Univ., 3Korea Institute of Energy Research |
| 키워드 |
Solar Cell |
| E-Mail |
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