| 초록 |
In this study, we demonstrate the effect of gate bias stress that is influenced by long-lived charge traps. Many research groups confirmed that the hydroxyl functional groups of the polymer are mainly responsible for the hysteresis, because these groups act as trap sites. Therefore, we used hydroxyl polymer as a gate dielectric in OFETs in order to determine the influence of hydroxyl group. Non-hydroxyl polymer and cured hydroxyl polymer reduced hydroxyl group, respectively, are also used as gate dielectrics to compare with bare hydroxyl polymer. As a result, we observed that transfer curve of hydroxyl polymer dielectric is much more shifted by bias stress than one of non-hydroxyl polymer dielectric. |
