| 학회 | 한국공업화학회 |
| 학술대회 | 2017년 가을 (11/08 ~ 11/10, 부산 벡스코(BEXCO)) |
| 권호 | 21권 2호 |
| 발표분야 | 에너지저장변환_포스터 |
| 제목 | Low temperature two-step process of Sb doped Cu(In1-x,Gax)Se4 thin film solar cells |
| 초록 | A CIGS 2-step process has been successfully used in manufacturing CIGS thin film solar cells and achieved a conversion efficiency as high as 22.3%. However, since the annealing process is performed in a high-temperature of 550°C, and the polymer film cannot be used for substrate. In this study, a CIGS absorption layer was fabricated by a two-step process at 450°C. Analysis of the CIGS thin film revealed that backside deflection of Ga is further intensified and a large amount of pore is formed on the back contact. We tried to improve the distribution of In and Ga elements in absorber layer by inserting Sb thin layer. As a result, we were confirmed that the crystalline, morphology and electrical characteristics of the CIGS solar cell containing Sb layer were found to be improved over of these of the CIGS device containing no Sb layer. Acknowledgment This work was supported by the DGIST R&D Programs of the Ministry of Science, ICT & Future Planning of Korea (17-BD-05). |
| 저자 | 전동환, 김영일, 황대규, 강진규, 김대환 |
| 소속 | 대구경북과학기술원 |
| 키워드 | CIGS soalr cell; Sb doping; 2-step process; low temerature; co-evaporation |
