| 학회 |
한국고분자학회 |
| 학술대회 |
2007년 봄 (04/12 ~ 04/13, 제주 ICC) |
| 권호 |
32권 1호 |
| 발표분야 |
전자/에너지 재료와 고분자 산업(산학협동위원회) |
| 제목 |
Influence of nanoscopic roughness of gate dielectrics on the performance of OTFT |
| 초록 |
Physicochemical properties of the interface between gate dielectrics and semiconductors are known to be critical for the performance of organic thin film transistors (OTFTs). In particular, the effect of interfacial roughness has been recognized as a key performance parameter but the experimental difficulties in systematic control over surface roughness limits the extensive studies. We report a method to control surface roughness more systematically using self-assembled block copolymer thin films and its effect on the performance of OTFT. The amplitude of surface roughness was controlled by varying the wet etching time for cylindrical PMMA microdomains in PS-b-PMMA thin films. Pentacene based OTFTs were prepared using the rough PS-b-PMMA surfaces. The effect of surface roughness will be addressed as a function of surface roughness that is characterized by both amplitude and lateral characteristic length scales. |
| 저자 |
조필성1, 김호철2, 박철민3
|
| 소속 |
1연세대, 2Almaden IBM, 3USA |
| 키워드 |
OTFT; dielectric; roughness
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| E-Mail |
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