| 학회 | 한국재료학회 |
| 학술대회 | 2009년 봄 (05/21 ~ 05/22, 무주리조트) |
| 권호 | 15권 1호 |
| 발표분야 | 구조재료 |
| 제목 | Characterization of various type of diamonds by boron implantation |
| 초록 | In general, natural diamonds are classified by the types of Ia, Ib, IIa, IIb and the impurities were found within them. Diamonds are classified depending on the amount of nitrogen contained within material and whether it is held as interstitial or substitutional sites. Most natural diamonds contain a considerable amount of nitrogen impurity in aggregated forms (type Ia). High purity natural diamonds with impurities fewer than a few ppm (type IIa) are rarely yielded, but such natural type IIa diamonds are well known to consistently have high dislocation density and considerable residual strain. Ion implantation is commonly used to modify many near-surface properties of materials. High-energy ions, typically 1000 keV in energy, are produced in an accelerator and directed as a beam onto the surface of the substrate. In previous research, it was reported that the blue color of type IIb diamonds is caused by impurities such as boron. Accordingly, in this study, a color change was observed after injection of boron into diamond crystals using ion implantation. In this study, two natural colorless type Ia diamonds, two synthetic type IIa diamonds, and two synthetic type Ib diamonds were used. The electron-beam was irradiated with 3 × 1017 electron dose density at 10 MeV. The distributions of boron were observed by secondary ion mass spectroscopy (SIMS) depth profiles. The accelerating voltage used was 8kV with a O2+ ion beam used SIMS spectroscopy. Absorption spectra in the mid-infrared range (4,000-400 cm-1 with 1 cm-1 resolution) were recorded for the six samples at room temperature with a Thermo-Nicolet Nexus 670 Fourier-transform infrared (FT - IR) spectrometer. Photoluminescence (PL) spectra were recorded with a Spectra-pro 2150i and a Spectra-pro 2300i micro-spectrometer over a range of 350 - 600 nm and 520 - 800 nm using 55 mW, 325 nm He-Cd and 40 mW, 514 nm Ar-ion lasers, respectively. |
| 저자 | 서진교, 박종완 |
| 소속 | 한양대 |
| 키워드 | Diamond; boron; implantation; photoluminescence |
