| 학회 |
한국고분자학회 |
| 학술대회 |
2008년 가을 (10/09 ~ 10/10, 일산킨텍스) |
| 권호 |
33권 2호 |
| 발표분야 |
고분자 구조 및 물성 |
| 제목 |
Interfacial change of Al cathode layer and P3HT:PCBM film during thermal annealing process |
| 초록 |
We studied interfacial change of Al cathode layer and P3HT:PCBM film during thermal annealing process using synchrotron x-ray reflectivity measurement. We used in-situ annealing chamber of PAL (Pohang Accelerator Laboratory) to measure real time variation of structure. By analysis of x-ray reflectivity data, we have concluded that Al atoms diffuse into P3HT:PCBM layer and affect to the detive efficiency. We propose a model of interfacial structure for Al/P3HT:PCBM systems. |
| 저자 |
김효정1, 김장주1, 이현휘2
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| 소속 |
1서울대, 2포항가속기(연) |
| 키워드 |
Al; P3HT; PCBM; OPV; x-ray; reflectibity; synchrotron
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| E-Mail |
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