화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2003년 가을 (10/10 ~ 10/11, 부경대학교)
권호 28권 2호, p.286
발표분야 특별 심포지엄
제목 In-situ GISAXS study on the porous low-k thin films
초록 To explain the formatoin of pores in Low dielectric constant thin film, in-situ grazing-incidence small angle x-ray scattering (GISAXS) measurements were performed on nanoporous methylsilsesquioxane (MSSQ) films that were generated by triethoxysilyl-terminated star-shaped poly(ε-caprolactone)s (PCLs) with six arms. GISAXS and thermogravimetric analysis (TGA) were excuted under vacuum and nitrogen respectively with a heating rate of 2℃/min. We obtained the data for a series of films where the initial porogen loading range from 10-40%. Subsequent heating to 400℃ results in the thermal decomposition and volatilization of PCLs components from vitrified PMSSQ matrix. Porogens began to be decomposed over 300℃ and the decomposition were finally finished at below 400℃. And the scattering invariants that were obtained from GISAXS pattern are in agreement with TGA data. The radii of pores that were calculated by Guinier fit are not changed as temperature increasing. This fact tell that the moment progen and MSSQ are mixed, they exist in phase separation.
저자 허규용, 오원태, 이병두, 윤진환, 이문호
소속 포항공대 화학과
키워드 GISAXS; low-k
E-Mail