| 학회 | 한국화학공학회 |
| 학술대회 | 2003년 가을 (10/24 ~ 10/25, 한양대학교) |
| 권호 | 9권 2호, p.2644 |
| 발표분야 | 이동현상 |
| 제목 | Modeling the actual process for manufacturing C/SiC composites in F-CVI reactor |
| 초록 | Mathematical modeling for the preparation of C/SiC composites from methyl-trichlorosilane and hydrogen at 1273 K by F-CVI(Forced-chemical vapor infiltration) reactor was studied. It is difficult to manufacture uniform composites, because pores at the preform surface is plugged. Hence, in the actual infiltration process, the process continues after polishing the surface of the preform, removing plugged pores, and overturning the preform. In this research, the mathematical modeling for the actual process with overturning the preform was carried out. At first, results with one overturming at 100 min were discussed. Then, results with one overturning at different times were compared. The process time with one overturning was 50 min longer than that without overturning. Additionally, the total amount of deposition increased 1.4 times with several overturnings. Depositions at the upper and the lower parts of the preform increased. However, it did not contribute much to the deposition at the center of the preform. Additionally, effects of many operation parameters were observed for the process with four overturnings at 60, 100, 140, and 180 min. Effects of the flow rate, the initial porosity, and the inlet concentration were observed. |
| 저자 | 김 희1, 정귀영1, 구형회2, 백운형2 |
| 소속 | 1홍익대, 2국방과학(연) |
| 키워드 | CVI;modeling;C/SiC |
| 원문파일 | 초록 보기 |
