| 학회 | 한국고분자학회 |
| 학술대회 | 2005년 봄 (04/14 ~ 04/15, 전경련회관) |
| 권호 | 30권 1호, p.167 |
| 발표분야 | 고분자 구조 및 물성 |
| 제목 | Effect of UV Pretreatment on the Formation of Nanoporous Low Dielectric Thin Films |
| 초록 | For the application of large scale integrated circuits (LSI), low dielectric materials are needed to reduce RC (resistance and capacitance) delay. Nanoporous materials are most promising candidate materials as low dielectric films due to its low dielectric constant (air ~ 1) and continuous reduction of k values by incorporating nanopores. To realize nanoporous low-k materials, fabrication of nanoporous organosilicate thin film were widely studied varying pore generating materials (porogen) and matrix materials. Matrix materials are investigated by synthesis of copolymers and terpolymers containing different chemical structure and chemical composition to optimize the mechanical and electrical properties. Main factors to select a new porogen material are degradation temperature of porogen and miscibility between a matrix material and porogen. Improvement of porogen miscibility was typically done by modification of end functional group of porogen material or end group capping techniques. However, it's difficult to modify degradation of porogen. Degradation temperature of porogen is also very important because porogen should decompose after matrix vitrification to make porous structure without pore collapse. In this study, we proposed a new process to lower matrix condensation temperature. Photo acid generator (PAG) facilitates matrix vitrification by generating acid after UV irradiation and then, matrix condensation occurs under 200 oC. This process can widen the choice of porogen. Nanoporous ultra low-k dielectric films were fabricated using modified Gemini surfactant with low degradation temperature as a porogen. X-ray reflectivity estimates absolute porosity of nanoporous films by measuring XRR in different conditions (in air and toluene). Ellipsometric porosimetry experiment was used to measure pore size. Apparent modulus and hardness are measured using depth-sensing indentation experiment. Dielectric constant was measured by MIM method. Using UV pretreatment process, we can control the condensation rate of organosilicate films and result in ultra low dielectric films (k ~ 2.0). |
| 저자 | 김수한1, 류이열1, 한준희2, 차국헌1 |
| 소속 | 1서울대, 2표준과학(연) |
| 키워드 | UV treatment; low-k material; nanoporous |
