| 학회 |
한국재료학회 |
| 학술대회 |
2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 |
18권 1호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Cu(In,Ga)Se2 thin films formed by pulse-reverse electrodeposition method |
| 초록 |
Cu(In,Ga)Se2 (CIGS) thin films were prepared by post-annealing of one step Cu(In,Ga)Se2 (CIGS) deposited precursor thin films on Mo coated glass substrates at room temperature. One step CIGS precursor thin films were deposited the electrolytic bath used containing Copper(II) chloride (CuCl2), Indium(III) chloride (InCl3), Gallium(III) nitrate hydrate (Ga(NO3)3 · xH2O), Selenous acid (H2SeO3), Lithium chloride (LiCl). The potassium hydrogen phthalate (C8H5KO4) was used as a complexing agent in the electrolytic bath. The pH of electrolytic bath solution was adjusted to 2.2 by adding diluted HCl. Effect of different pulse type on the structural, morphological, compositional, electrical and optical properties of CIGS thin films were investigated. In order to research for effect of pulse types on the CIGS thin film, the pulse time varied from 0.5 S to 3 S. The CIGS precursor thin films deposited at short pulse time had dense microstructure and more uniformity of composition ratio. Further analysis of precursor and post-annealed CIGS thin films will be discussed. |
| 저자 |
조승현1, 김진혁1, 신승욱2, 문종하1, 이정용2
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| 소속 |
1전남대, 2KAIST |
| 키워드 |
Cu(In; Ga)Se2; thin film solar cells; electrodeposition; low cost synthesis; pulse-reverse process
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| E-Mail |
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