| 초록 |
In this study, we report on simple fabrication method of single polyaniline nanowires based field-effect transistors. Polyaniline nanowires were synthesized via chemical oxidation on the device having the nanochannel fabricated by e-beam lithography. The formation of single polyaniline nanowires were confirmed by using field emission scanning electron microscope and optical electron microscope. Dimensions and positions of single polyaniline nanowires were controlled with channel shapes and positions. Electrical characteristics of single polyaniline nanowire based field effect transistors were also observed. The performance of single polyaniline nanowire based field effect transistors was showed the possibility as a sensitive sensor. |
