| 초록 |
A FET NIR device with a single wire channel of SWNT exhibited excellent photo sensitivity greater than 4 under NIR illumination. In spite of great potential of FET NIR detector with SWNTs, they are in early stage of the development and futher efforts should made to address several important issues such as higr sensitivity, fast switching and more importantly easy fabication of device solition processd as well as mechanically flexible.This detector can control gate voltage. That mean is you can control dark currnet level and sensitivity. Making device process is very easy and fast using PMMA passivtion. |
