| 초록 |
We investigated the effect of buffer layer modification by external source on photovoltaic cell performance on regioregular poly-(3-hexylthiophene) and [6,6]phenyl C60 butyric acid methyl ester blend. Poly(3,4-ethlyene dioxythiophene):poly(styrene sulphonate)(PEDOT:PSS) is the most famous buffer layer on modifying the interface between ITO and active layer. However, lots of hole loss are occurred there because of the low conductivity and large interfacial resistance. We could decrease this loss simply by irradiating external light on PEDOT:PSS. When external light irradiated, PEDOT:PSS showed resonance structure change so conductivity was increased while interfacial resistance was decreased. The effect of irradiation was saturated over certain exposure time. |
