| 초록 |
Recently, oxide TFT is widely studied due to many advantages such as transparency, low-cost, eco-friendly and high performance. In this presentation, we report the formation and analysis of Al2O3 gate dielectric layer on patterned ITO glass. For this, a precursor solution system, polymer sacrifice matrix system, has been developed to form high quality Al2O3 gate dielectric layer and compared with the gate dielectric prepared from conventional solution process where organic solvent and water were used for the formation of its precursor solution. Based on our system, smooth (1.08 nm rms roughness) and thin (~ 30 nm) Al2O3 film is nicely formed and we found that the electrical properties are better compared with conventionally formed. For the formation of TFT devices, In2O3 layer (active layer) and Al (electrodes) is deposited as a through a by aqueous solution process and thermal vacuum evaporation, respectively. The properties of devices are discussed in detail on this presentation. |
