| 학회 |
한국화학공학회 |
| 학술대회 |
2022년 봄 (04/20 ~ 04/23, 제주국제컨벤션센터) |
| 권호 |
28권 1호, p.454 |
| 발표분야 |
[주제 8] 에너지 저장 |
| 제목 |
Preparation SnS films by sputtered SnO2 films |
| 초록 |
Direct reduction of metal oxide films into a few metal sulfide films is recently explored as an alternative method for large area and uniform deposition. The process is yet not fully understood. Here, we show that by finely tuning the quality of the pre-deposited oxide into the sulfurization temperature can be largely decreased, avoiding major substrate damage and allowing direct device fabrication. The direct relationship between the role of selecting different metal oxides prepared by sputtering was investigated in detail. Because of its outstanding physical properties, the formation of tin sulfide (SnS) from the reduction of tin oxide (SnO2) was chosen as a model for proof of concept. By optimizing the process parameters and the selection of metal oxides, SnS films with controlled atomic thickness can be demonstrated. Interestingly, the domain size and electrical properties of the SnS films are highly affected by the quality of the metal oxides, for which the SnS film with small domains exhibits a metallic behavior and the SnS films with larger domains provide clear semiconducting behavior. |
| 저자 |
바수데바레디1, Sreedevi GEDI2, Ignatius Andre SETIAWAN3, Salh ALHAMMADI4, Woo Kyoung KIM5
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| 소속 |
1영남대, 2School of Chemical Engineering, 3Yeungnam Univ. 280 Daehak-ro, 4Gyeongsangbuk-do, 5Gyeongsan-si |
| 키워드 |
에너지 환경(Energy and Environment) |
| E-Mail |
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| 원문파일 |
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