| 초록 |
Cu2ZnSn(S,Se)4(CZTSSe)absorber thin films were prepared on Mo coated soda-lime glass substrates bysulfurization of stacked Cu/Sn/Zn precursor thin films. Absorber layers weresulfo-selenized in rapid thermal annealing (RTA) system. The resulting filmswere processed into solar cell devices by following standard procedures thatincludes chemical bath deposition of CdS film (~60 nm), radio frequency (RF)sputtering of i-ZnO (~100 nm) and Al-ZnO (AZO) film (~600 nm), and directcurrent (DC) sputtering of a patterned Al grid as the top electrode.Sulfo-selenization process plays an important role in improving the solarenergy conversion of CZTSSe thin film solar cells. Effects of passivation layer Rapid Thermal Annealing(RTA) processes on the microstructure, crystallinity,electrical properties, and cell efficiencies of CZTSSe thin film solar cellsare studied using field emission scanning electron microscopy (FE-SEM), X-raydiffraction (XRD), Raman spectroscopy, I-V measurement, and external quantumefficiency measurement system(EQE). |
