| 초록 |
Conventional wet-transfer method of graphene grown on catalyst has the limitation that graphene is unable to transfer onto water-sensitive target substrates. We developed a novel dry transfer method for large-area monolayer graphene. Our dry-transferred graphene showed equivalent properties with the graphene transferred by conventional wet transfer method, confirmed by electrical, microscopic, and spectroscopic measurements. We argue that our dry transfer method allows large-area graphene to be transferred onto a variety of substrates, which can be damaged by water (e.g., aluminum oxide, silk, organic semiconductor, etc.). Furthermore, we utilized this method to fabricate flexible graphene transistors with ultra-thin aluminum oxide gate dielectric. The transistors operated with a low supply voltage of 2 V and showed an average Dirac voltage of 0.38 V, an average hole (electron) mobility of 1575 cm2/Vs (772 cm2/Vs), and high air stability more than 60 days. |
