| 학회 | 한국재료학회 |
| 학술대회 | 2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 | 13권 2호 |
| 발표분야 | 반도체재료 |
| 제목 | Changes in properties of ZnO:Al Films with deposition temperature fabricated by E-beam evaporation |
| 초록 | Recently, ZnO films have attracted much interest as transparent conducting films attributed to low material cost, non-toxicity, relatively low deposition temperature, and stability in hydrogen plasma compared to ITO films. We investigated the effect of deposition temperature on the properties of Al doped ZnO transparent electrode as a substitute for ITO. Al doped ZnO thin films were deposited on alumino-borosilicate glass and Si-wafer substrates by E-beam evaporation. Only (002) diffraction peak was detected from X-ray diffractometer (XRD), so we concluded that the thin films were highly c-axis-oriented. The SEM images showed that the films had faceted surface structure and atomic force microscopy (AFM) image revealed that root mean square roughness was below 200 Å. The optical transmittance of the films was increased as deposition temperature was increased in the visible range. The optical band gap energy of the films was above 3.3 eV. We achieved the lowest resistivity of 5.5×10–4 Ω•cm from the thin films. |
| 저자 | 김대현, 김도윤, 정은경, 김인수, 최세영 |
| 소속 | 연세대 |
| 키워드 | Zinc oxide; E-beam evaporator deposition; Crystal structure; Optical and electrical properties |
