| 초록 |
Recently, resistive switching random access memory (ReRAM) is one of the promising candidates for next-generation memory devices. We utilized polyimide films as the resistive switching layer in transparent memory devices. Partially aliphatic copolyimides were prepared from rel-(1'R,3S,5'S)-spiro[furan-3(2H),6'-[3]oxabicyclo[3.2.1]octane]-2,2',4',5(4H)- tetrone (DAn), 2,6-diaminoanthracene (AnDA), and 4,4'-oxydianiline (ODA) by varying the molar ratio of AnDA and ODA. We found that the behavior of memory device varies from WORM to Bipolar with molar feed ratio of DAn : AnDA : ODA. This result implies that the memory properties can be controlled by changing the polyimide composition. The two devices, PI-A100-O0 (DAn:AnDA:ODA=1:1:0) and PI-A70-O30 (DAn:AnDA:ODA=1:0.7:0.3), showed over 90% transmittance in the visible region. The behavior of the ReRAM devices is considered to be governed by trap-controlled, space-charge limited conduction (SCLC) and local filament formation. |
