| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 봄 (04/11 ~ 04/12, 대전컨벤션센터) |
| 권호 |
38권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Analysis of Bias-Stress Effect in Organic Transistors by Decoupling the Charge Traps in Semiconductors and Gate-Dielectrics |
| 초록 |
We present a novel strategy for analyzing bias-stress effects in organic transistors based on a double stretched-exponential formula. The formula is obtained by modifying a traditional single stretched-exponential expression comprising two parameters that describe the bias-stress effects. The expression enables separating out the contributions due to charge trapping events in the semiconductor layer-side of the interface and the gate-dielectric layer-side of the interface. The validity of our method was tested by designing two model systems in which the physical properties of the semiconductor layer and the gate-dielectric layer were varied systematically. We found that the gate-dielectric layer-side of the interface, in general, plays a more critical role than the semiconductor layer-side of the interface in the bias-stress effects, possibly due to the wider distribution of the activation energy for charge trapping. |
| 저자 |
최현호1, 강문성2, 김민1, 김해나1, 조정호3, 조길원1
|
| 소속 |
1POSTECH, 2숭실대, 3성균관대 |
| 키워드 |
Organic transistor; Bias stress; charge trapping; double stretched exponential formula
|
| E-Mail |
|
