| 학회 |
한국재료학회 |
| 학술대회 |
2005년 가을 (11/10 ~ 11/11, 한양대학교) |
| 권호 |
11권 2호 |
| 발표분야 |
전자재료 |
| 제목 |
Piezoresponse force microscopy를 이용한 강유전 PbZrO3/PbTiO3 인공 초격자의 강유전분극특성 연구 |
| 초록 |
We have studied ferroelectric domain switching and growth in ferroelectric PbZrO3 (PZO)/PbTiO3 (PTO) artificial superlattices by patterning the domain structure and measuring the domain size with various pulse voltage and time using piezoresponse force microscopy (PFM). It is found that PZO/PTO superlattices behave as the single-component system with a single ferroelectric domain structure. Their domain switching was attributed to ferroelectric polarization reversal penetrating throughout the entire superlattice. Domain size increases linearly with the pulse voltage, while domain size depends logarithmically on the pulse duration, indicating that the domain size is kinetically limited to the pulse voltage parameters. It is suggested that the domain growth of superlattice is governed by two distinct switching processes, i.e., fast forward nucleated domain motion of atomic-size step and the sidewise propagation of domain wall. We will discuss the electric field dependence of domain wall velocity in respect to domain dynamics of superlattices. |
| 저자 |
Choi Taekjib1, Choi Jin-Sik2, Park Bae Ho3, Shin Hyunjung4, Lee Jaichan3
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| 소속 |
1School of Advanced Materials Science and Engineering, 2Sungkyunkwan Univ., 3Department of Physics, 4Konkuk Univ. |
| 키워드 |
PbZrO3/PbTiO3 artificial superlattice; Domain switching and growth; Piezoresponse force microscopy
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| E-Mail |
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