| 학회 |
한국재료학회 |
| 학술대회 |
2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 |
17권 2호 |
| 발표분야 |
B. Nanomaterials and Processing Technology(나노소재기술) |
| 제목 |
The effect of growth temperature on the epitaxial growth of vertically aligned ZnO Nanowires by chemical vapor deposition |
| 초록 |
Vertically aligned single-crystal ZnO nanowires have been successfully grown on c-plane sapphire substrate using chemical vapor deposition (CVD) without catalyst. According to growth temperatures, it was changed ZnO growth characteristic. We investigated the effect of substrate temperatures on the growth ZnO films or nanowires on c-plane (0001) sapphire substrates. The ZnO films were acquired at 500°C, whereas the ZnO nanowires were obtained at 600°C, 700°C, and 800°C. The growth behavior diameter and growth rate of ZnO were changed due to different temperature. As a result of analyzing in-plane residual stress by X-ray diffraction, the optimized condition of ZnO nanowires were at 600°C. |
| 저자 |
임소영, 이도한, 장삼석, 김아영, 변동진
|
| 소속 |
고려대 |
| 키워드 |
ZnO; nanowires; compressive stress; chemical vapor deposition
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| E-Mail |
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