| 초록 |
In this paper, we demonstrate three-dimensional (3D) integrated circuits based on a 3D complementary organic field-effect transistor. The transistor-on-transistor structure was achieved by vertically stacking a p type OFET over an n-type OFET with a shared gate joining the two transistors, effectively doubling the number of transistors printed per unit area. All the functional layers including organic semiconductors, source/drain/gate electrodes and interconnection paths were fully inkjet-printed except a parylene dielectric which was deposited by chemical vapor deposition. With the 3D transistor-on-transistor structure and robust inkjet process, we implemented several digital circuits, including an array of inverters, a ring oscillator, and a full adder. Our 3D inkjet-printing approach provides a path for achieving high transistor density, high yield, high uniformity, and long-term stability, which are critical for the realization of organic digital ICs and other intelligent devices. |
