| 학회 |
한국고분자학회 |
| 학술대회 |
2006년 봄 (04/06 ~ 04/07, 일산킨텍스) |
| 권호 |
31권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
High Performance Organic Field-Effect Transistor Memory Based on Polymer Gate Electret |
| 초록 |
From the recent remarkable progress in organic electronics, several types of electronic memory devices based on organic materials have been extensively demonstrated. Organic field-effect transistor (OFET) memory devices based on ferroelectric gate and gate electrets were also reported. In this type of OFET memory, the field-effect is modulated by the spontaneous polarization in ferroelectric layer or trapped charges in the gate electret layer, respectively. This OFET memory can take many advantages compare to the other organic memory devices. The OFET memory using gate electrets have already been reported. In this report, we will report a new structure of OFET memory devices using polymeric gate electret, whose devices show high performance OFET and non-volatile memory characteristics. |
| 저자 |
백강준1, 노용영2, 김지은3, 김동유1
|
| 소속 |
1광주과학기술원, 2Cavendish Laboratory, 3Univ. of Cambridge |
| 키워드 |
Organic non-volatile memory |
| E-Mail |
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