| 학회 | 한국고분자학회 |
| 학술대회 | 2003년 봄 (04/11 ~ 04/12, 연세대학교) |
| 권호 | 28권 1호, p.88 |
| 발표분야 | 특별 심포지엄 |
| 제목 | Search for New Gate and Semiconducting Organic Materials for Organic Thin Film Transistor for Flexible Displays : Influence of Gate Dielectric Layer on Mobility |
| 초록 | We studied the key factors that influence the properties of gate dielectric and semiconducting materials in organic thin film transistors (OTFT). Some of the criteria for gate dielectric layer are processibility from solutions, robustness, surface smoothness, high dielectric constant, and low leakage currents. Semiconducting materials require processibility from solution, well-ordered structure after deposition, and acceptable mobility. In particular, we carried out a detailed study to understand the effect of surface roughness of the gate dielectric layer on OTFT mobility. Our results indicate that as the surface roughness increases, the mobility decreases. Furthermore, the surface roughness depends on the method of depositing SiO2. We also demonstrate the interfacial agent, octadecyltrichlorosilane (OTS), is essential for high mobility. |
| 저자 | 김지아;강지훈;황상수;홍상미;표상우;홍종인;주영창;김영관;윤도영 |
| 소속 | 서울대 |
| 키워드 | Organic Thin Film Transistor; OTFT |
