| 초록 |
Atomic layer deposition(ALD) has been widely used for the deposition of thin oxide layer with good barrier properties due to the advantage of atomic-level control of film thickness and uniformity of deposition layer. Recently, ozone and oxygen are used as oxidant materials in ALD process to replace the conventional H2O source, because they are more reactive than H2O. In this study, multilayer consisting of Al2O3/ZrO2 nanolaminate layer was formed on PEN substrate by plasma-enhanced atomic layer deposition (PEALD) process. Alternating aluminum oxide and zirconium oxide layers were deposited using TMA and TEMAZ as precursors, respectively, with oxygen plasma as reactant material. Process conditions of PEALD were investigated in terms of layer thickness, refractive index, chemical composition and barrier property. At optimized conditions, water vapor transmission rates (WVTR) of the Al2O3/ZrO2 multilayer was lowered to ~5×10-4 g/m2day. |
