| 초록 |
Semiconductor quantum dot-sensitized solar cells (QDSSCs) technology has attracted considerable interest for solar energy harvesting and conversion efficiency. The concept of QDSSCs is similar to that of dye sensitized solar cells (DSSCs) but with the molecular dye replaced by a chalcogenide semiconductor quantum dots. The semiconductor quantum dots have two unique advantages. The band gap of the QDs can be tailored by changing the size of the QDs, allowing one to tune the visible response of the QDs. Second, the QDs can generate multiple electron–hole pairs per photon through the impact ionization effect. Ag2S is a promising photosensitizer for QDSSCs in photovoltaic cells due to its bandgap of ~1.0 eV and relatively high absorption coefficients. In this work, we report an investigation of ZnO NPs modified with Ag2S QDs and their performance in QDSSCs. A comparison of the properties between pure ZnO NPs and Ag2S QD-sensitized ZnO NPs is also investigated. |
