| 학회 | 한국재료학회 |
| 학술대회 | 2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 | 13권 2호 |
| 발표분야 | 전자재료 |
| 제목 | Dry etching of Polymethyl methacrylate (PMMA) in capacitively coupled SF6, SF6/Ar and SF6/CH4 plasmas. |
| 초록 | Polymethyl methacrylate (PMMA) is considered about new substrate material for MEMS and Display due to its light weight, high transparency and low material cost. We studied dry etching of Polymethyl methacrylate (PMMA) in capacitively coupled SF6, SF6/Ar and SF6/CH4 plasmas. We used mechanical pumping-based capacitively coupled plasmas and measured the etch rate, selectivity and RMS roughness. The etch parameters were RIE chuck power and % gas composition. After etching the results were measured by surface profiler, Optical Emission Spectroscopy and FE-SEM . In this experiment, we knew the effect of fluorine in Polymethyl methacrylate (PMMA) substrate. At the SF6, SF6/Ar and SF6/CH4 plasmas, etch rate of the PMMA was linearly increased from 25W to 150W. Etch rate of the PMMA in the mixed SF6/Ar was better than pure SF6 gas. RMS roughness was somewhat rough than before etching. We also discussed about OES data. |
| 저자 | 박연현1, 주영우2, 김재권1, 노호섭2, 이진희1, 이제원2, 조관식1, 송한정2 |
| 소속 | 1인제대, 2나노메뉴팩쳐링 (연) |
| 키워드 | Plasma etching; Polymer etching; Polymethyl methacrylate (PMMA) |
