| 초록 |
YNbO4:Eu3+ phosphor thin films ere deposited on glass substrates at several growth temperatures by using an RF-magnetron sputtering, system with a 1 inch-diameter YNbO4:Eu3+ target. The thin films were annealed at 550 °C for 20 min and the effect of the growth temperature on the structural, morphological, and optical properties of the thin films was invstigated. As for the excitation of the films for emission at 619.8 nm, three narrow excitation spectra centered at 278.3, 397.1, 49.3 nm were observed. The emission spectra of the thin films under excitation at 278.3 nm exhibited one intense red band at 619.8 nm and three weak bands peaking at 579.4, 619.8, and 706.9 nm, respectively. The results suggest that emission intensity can be controlled by changing the growth temperature.
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