| 초록 |
As the design rule of semiconductor device decreases, chemical mechanical polishing has been highlighted in the point of multi-layer interconnections, such as planarization and damascene. Particularly, CMP slurries, which were used in shallow trench isolation CMP technologies, are strongly required high uniformity and selectivity as well as low scratch characteristics because of suitable process margin. Generally, as STI structures are composed of various pattern densities and feature size and adopt silicon nitride layer as a stopping layer, conventional silica slurries are not adequate for STI CMP below 0.14mm design rules. Particularly, as design rules shrink further, high uniformities are required in not only STI CMP not also ILD process. Therefore, CMP slurries, which have both higher chemical reactivity and more uniformed polished profiles than those of commercial silica slurries, are strongly recommended. In this presentation, we are to report silica-based slurry, which showed highly uniformed polished layer. Moreover, ceria slurry additives were developed, which accomplish low defects as well as high nitride selectivity during CMP process. |
