| 학회 |
한국고분자학회 |
| 학술대회 |
2018년 가을 (10/10 ~ 10/12, 경주컨벤션센터) |
| 권호 |
43권 2호 |
| 발표분야 |
대학원생 구두발표(발표15분) |
| 제목 |
Vapor-phase synthesis of high-k, ultrathin polymer gate insulator for low-power thin-film transistor |
| 초록 |
A series of high-k, ultrathin copolymer gate dielectrics were synthesized from 2-cyanoethyl acrylate (CEA) and di(ethylene glycol) divinyl ether (DEGDVE) monomers via initiated chemical vapor deposition (iCVD) method. The highly polar cyanide functional group in the CEA is responsible for the enhanced dielectric constant and the excellent dielectric strength was achieved by the incorporation of DEGDVE crosslinker. The copolymer film with the optimized composition showed a dielectric constant higher than 6 and extremely low leakage current densities even with 20 nm thickness. High-performance organic thin-film transistors (OTFTs) and oxide TFTs which showed hysteresis-free transfer characteristics with an operating voltage less than 3 V were demonstrated with this high-k polymer dielectric. Furthermore, the flexible OTFTs retained their ideal TFT characteristics and low leakage current up to 2% applied tensile strain, which is one of the most flexible OTFTs reported to date. |
| 저자 |
최준환, 주문규, 박관용, 임성갑
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| 소속 |
KAIST |
| 키워드 |
Gate dielectric; high-k polymer; initiated chemical vapor deposition (iCVD); thin-film transistor (TFT)
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| E-Mail |
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