| 초록 |
Various applications using indium gallium zinc oxide (IGZO) thin films have been demonstrated. Especially, backbone thin film transistors (TFT) have been focused with IGZO due to its superior properties over current amorphous IGZO (a-IGZO). However, mobility enhancement is still challenging. To boost mobility in TFT device, modification on the crystal structure of the channel material was proposed. In this study, C-axis aligned crystalline IGZO (CAAC-IGZO) thin film was prepared by metal induced method and compared with a-IGZO thin film. Improved electrical characteristics such as higher mobility and low off-leakage current are attained using CAAC-IGZO thin film. These improvements are attributed to partially-induced crystalline structure using catalytic effect. Crystalline structure was analyzed with XRD and electrical characteristics were also evaluated by back-gate transistor measurement. The maximum field effect mobility of CAAC-IGZO TFT is achieved with 135.12 cm2/Vs, which is 8-folder higher than that of a-IGZO-based TFT. Our results indicate that CAAC-IGZO thin film can be a promising channel material in TFT device. Acknowledgment: This work was supported by the Future Semiconductor Device Technology Development Program (10080689) funded By MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium) |
