| 학회 |
한국화학공학회 |
| 학술대회 |
2012년 봄 (04/25 ~ 04/27, 제주 ICC) |
| 권호 |
18권 1호, p.517 |
| 발표분야 |
에너지 |
| 제목 |
Iodine Doped Polyaniline Thin Film Heterostructure Devices |
| 초록 |
The deposition of undoped and iodine (I2)-doped polyaniline (PANI) on TiO2 thin film was carried out using plasma-enhanced chemical vapor deposition (PECVD) under different power inputs for the fabrication of p-polyaniline/n-TiO2 heterostructure devices. The significant changes in the structural and optical properties confirmed the I2 doping of PANI with strong bonding to the TiO2 nanomaterials. A device fabricated by PANI/TiO2 or I2-PANI/TiO2 thin film with a top platinum (Pt) layer exhibited nonlinear behavior of current (I)-voltage (V) curve, i.e., moderate diode behavior. Compared to Pt/PANI/TiO2 heterostructure device, the Pt/I2-PANI/TiO2 heterostructure device showed improved I-V properties with a considerably higher current of 0.050 mA, which might be attributed to the I2 doping-induced generation of large numbers of polarons in the PANI band gap. |
| 저자 |
Sadia Ameen, 송민우, Firoz Khan, 김영순, 신형식
|
| 소속 |
전북대 |
| 키워드 |
Doping; Polyaniline; Heterostructure
|
| E-Mail |
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| 원문파일 |
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