| 학회 |
한국화학공학회 |
| 학술대회 |
2011년 가을 (10/26 ~ 10/28, 송도컨벤시아) |
| 권호 |
17권 2호, p.1814 |
| 발표분야 |
재료 |
| 제목 |
Lateral-growth of ZnO nanorods in solution for high performance field-effect transistors |
| 초록 |
We have exploited a method for the lateral-growth of multiple ZnO nanorods between electrodes in solution without the use of a metal catalyst to fabricate high performance field-effect transistors (FETs). This method enables us to directly align overlapped or overlap-free nanorods between electrodes by eliminating the vertical growth components and complex structural networks. The overlap-free ZnO nanorod FETs showed better performance with a mobility of ~8.5 cm3 V-1 S-1 and an on/off ratio of ~4 × 105 than the overlapped ZnO nanorod FETs having a mobility of~5.3 cm3 V-1 S-1 and an on/off ratio of ~3 × 104. All the FETs fabricated in this work showed much better performance than the previously reported solution-based ZnO FETs. Overlapped or overlapped-free ZnO nanorods FETs can serve as a useful platform for the fundamental understanding and future practical applications of solution based nanorods TFTs, gas-sensor, bio-sensor, MESFET, high performance FETs, LED, detector and electrical devices. |
| 저자 |
박용규, 최한석, 김진환, Soumen Das, 한윤봉
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| 소속 |
전북대 |
| 키워드 |
ZnO nanorod; Overlapped or overlapped free ZnO nanorods FETs
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| E-Mail |
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| 원문파일 |
초록 보기 |
