| 학회 | 한국공업화학회 |
| 학술대회 | 2015년 가을 (11/04 ~ 11/06, 제주국제컨벤션센터(ICCJEJU)) |
| 권호 | 19권 2호 |
| 발표분야 | 디스플레이_포스터 |
| 제목 | Unidirectional oxide thin-film diode based on oxide hetero-interface junction |
| 초록 | The diode is a crucial component in most electronic devices to convert AC input signals into DC outputs, and discharge an abrupt electrical stress for protecting process circuits. P-N junction diodes consisting of p-/n-type semiconductors have been widely used in conventional crystalline CMOS devices. However, it is hard to fabricate crystalline p-/n-type semiconductors junction in a large spatial TFT backplane for display manufacture due to the amorphous phases of deposited films. For oxide semiconductor materials (e.g. IGZO, ZnO, and ZnSnO), the research for p-type material still remains at the initial stage. In this work, the new type of thin-film diode based on oxide hetero interfaces between oxide insulator and ZnO film is investigated. In the diode, current flows only in one direction because the ZnO film permits electrons from a cathode electrode inject into the conduction band of the oxide insulator. |
| 저자 | 김연상, 박준우, 이진원 |
| 소속 | 서울대 |
| 키워드 | diode; thin-film diode; oxide semiconductor; SCLC |
