| 학회 | 한국재료학회 |
| 학술대회 | 2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 | 22권 1호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Enhancing thermoelectric property of super-lattice Al2O3/ZnO atomic film via interface confinement |
| 초록 | Recently, several reports about improved thermoelectric properties of Aluminum Zinc Oxide (AZO) thin films deposited by atomic layer deposition (ALD) are reported. It is obvious that both Al concentration and film thickness affect thermoelectric properties of AZO, Seebeck coefficient, electrical properties and thermal conductivity. However, there is little report about changing Al2O3 doping layer thickness. In this paper, we demonstrated thermoelectric properties as a function of Al2O3 doping layer thickness. AZO thin film is deposited with combination of ZnO ALD cycle and Al2O3 ALD cycle at 250℃. Al2O3 thickness is gradually increased from 0.13nm to 1.23 nm. Total film composition is fixed to 2% AZO. Thermal conductivity is significantly decreased as increase of Al2O3 layer thickness while seebeck coefficient increased from 14μV/K to 65μV/K. Thermal conductivity result will be discussed after. Figure of merits are calculated by above factors. The tendency of result would be explained by Quantum confinement effect. As a result thermoelectric properties of AZO are improved depending on Al2O3 layer thickness. |
| 저자 | 이정훈1, 박진성1, 박태현2, 이승환1 |
| 소속 | 1한양대, 2중앙대 물리학과 |
| 키워드 | Superlattice; nanolaminate; thermoelectric; Atomic Layer deposition (ALD); Aluminiun doped-ZnO(AZO); Quantum confinement effect |
