| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 가을 (10/06 ~ 10/08, 제주 ICC) |
| 권호 |
39권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Efficiency enhancement in polymer gate-dielectric based n-type organic field-effect transistors through modified gold electrodes |
| 초록 |
The performance enhancement of n-type organic field-effect transistors (OFETs) fabricated on cross-linked polymer gate dielectric, through the use of rubidium carbonate (Rb2CO3) modified gold source and drain electrodes with N,N′-ditridecyl-3,4,9,10-perylenetetracarboxylicdiimide (PTCDI-C13) as n-channel material have been demonstrated. The Rb2CO3 thickness dependence device’s electrical performances have been investigated in detail. The device with 10 Å Rb2CO3 exhibited the best performance, and its mobility was five times higher than that of the device without Rb2CO3. UV-visible, X-ray and ultraviolet photoemission spectroscopy were used to investigate the interface between Rb2CO3 and PTCDI-C13, and we found that charge transfer from Rb2CO3 to PTCDI-C13 occurred, resulting in the reduction of the electron charge injection barrier from the gold electrode. The charge injection mechanism and OFET performance enhancement with Rb2CO3 are discussed in detail. |
| 저자 |
Amit Kumar1, 표승문2, Akshaya Kumar Palai3, Jaehyuk Kwon4, Seung-Un Park5
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| 소속 |
1KONKUK Univ., 2Department of Chemistry, 3Konkuk Univ., 4120 Neungdong-ro, 5Gwangjin-gu |
| 키워드 |
Interface modification; Electron injection mechanism; n-Channel; Organic thin-film transistor
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| E-Mail |
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