| 학회 | 한국재료학회 |
| 학술대회 | 2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 | 20권 1호 |
| 발표분야 | B. 나노 재료(Nanomaterials) |
| 제목 | Fabrication and Characterization of Hydrogen Getter Based on Rare Metal Doped Nanoporous SiO2/Si Substrate without Activation Process |
| 초록 | The performances of semiconductor devices are adversely affected by the gaseous impurities such as H2 gas occurred during semiconductor fabrication. The generated hydrogen gas within the device is caused by short lifetime and degradation of the product. To overcome this problem, the getter which is a material widely used to remove impurity gases from various vacuum devices is attached in the vacuum space to maintain vacuum conditions required and to enhance lifetime of the operating devices through the sorption of undesired gases. The existing metal getters are invariably covered with thin oxide layers in air and the native oxide layer must be dissolved into the getter materials for activation. However, high temperature is needed for the activation, which cause unavoidable deleterious effects on overall devices. Therefore, it is essential to synthesizing the getter without activation temperature to improve device efficiency and gas-adsorption properties. In the present study, we synthesized and characterized getter materials using palladium (Pd) and platinum (Pt) which can be used as getter materials to adsorb H2 gas. In order to enhance the sorption of hydrogen, the porosity layer prepared by etching process were used as supporting substrates in H2 gas detection due to their large specific surface area. The morphology of the fabricated getter were investigated by SEM. The phase developments and bonding structure of material were examined by XRD and XPS. The hydrogen sorption was carried out by using the chemisorption equipment without activation process. |
| 저자 | Nu Si A Eom1, Hyo Ryoung Lim2, Yo-Min Choi1, Jeong-Ho Cho2, Yong-Ho Choa1 |
| 소속 | 1Department of Fusion Chemical Engineering, 2Hanyang Univ. |
| 키워드 | Getter; Pt/Pd Doping; Hydrogen Adsorption; Nanoporous SiO2/Si substrate |
